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SI3900DV-T1-GE3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI3900DV-T1-GE3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 9 page Document Number: 71178 S09-2275-Rev. D, 02-Nov-09 www.vishay.com 3 Vishay Siliconix Si3900DV TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.0 0.1 0.2 0.3 0.4 0.5 012 34 567 VGS = 4.5 V VGS = 2.5 V ID - Drain Current (A) 0.0 0.9 1.8 2.7 3.6 4.5 0.0 0.5 1.0 1.5 2.0 2.5 VDS = 10 V ID = 2.4 A Qg - Total Gate Charge (nC) 1.2 1.5 0.1 1 10 0 0.3 0.6 0.9 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 50 100 150 200 250 300 04 8 12 16 20 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS = 4.5 V ID = 2.4 A TJ - Junction Temperature (°C) 0.00 0.08 0.16 0.24 0.32 0.40 0 1234 5 VGS - Gate-to-Source Voltage (V) ID = 2.4 A ID = 1 A |
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