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Document Number: 71178

S09-2275-Rev. D, 02-Nov-09

Vishay Siliconix

Si3900DV

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

Threshold Voltage

- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

- 50

- 25

0

25

50

75

100

125

150

Single Pulse Power, Junction-to-Ambient

0.01

0

1

6

8

2

4

10

30

0.1

Time (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (s)

2

1

0.1

0.01

1

10

600

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

100

1. Duty Cycle, D =

Notes:

4. Surface Mounted

Normalized Thermal Transient Impedance, Junction-to-Foot

110

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)