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SI3850ADV-T1-GE3 Datasheet(PDF) 6 Page - Vishay Siliconix |
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SI3850ADV-T1-GE3 Datasheet(HTML) 6 Page - Vishay Siliconix |
6 / 13 page www.vishay.com 6 Document Number: 73789 S09-2110-Rev. B, 12-Oct-09 Vishay Siliconix Si3850ADV P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS = 5 V thru 4 V 3.5 V 2 V 3 V 2.5 V 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.5 1.0 1.5 2.0 2.5 ID - Drain Current (A) VGS = 3 V VGS = 4.5 V VGS = 2.5 V 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 Qg - Total Gate Charge (nC) ID = 1 A VDS = 10 V VDS = 5 V VGS = 15 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature - 55 °C VGS - Gate-to-Source Voltage (V) 0.0 0.4 0.8 1.2 1.6 2.0 0 1234 5 TC = 125 °C 25 °C VDS - Drain-to-Source Voltage (V) 0 22 44 66 88 110 04 8 12 16 20 Crss Coss Ciss TJ - Junction Temperature (°C) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 ID = 0.5 A VGS = 3 V VGS = 4.5 V |
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