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BAT64-07W Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BAT64-07W Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 3 page BAT 64-07W Semiconductor Group Sep-07-1998 1 Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage VPS05605 4 2 1 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Package Pin Configuration 4 = A1 BAT 64-07W 67s Q62702-A3470 1 = C1 2 = C2 SOT-343 3 = A2 Maximum Ratings Value Unit Parameter Symbol Diode reverse voltage V 40 VR 250 Forward current mA IF 120 Average forward current (50/60Hz, sinus) IFAV Surge forward current (t < 100µs) IFSM 800 250 mW Total power dissipation, TS ≤ 104 °C Ptot °C Tj Junction temperature 150 Storage temperature Tstg -55...+150 Thermal Resistance Junction - ambient 1) ≤455 K/W RthJA RthJS ≤185 Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm2 Cu Semiconductor Group 1 1998-11-01 |
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