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SI3458BDV Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI3458BDV Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 11 page Vishay Siliconix Si3458BDV Document Number: 69501 S09-0660-Rev. B, 20-Apr-09 www.vishay.com 1 N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) d Qg (Typ.) 60 0.100 at VGS = 10 V 4.1 3.5 nC 0.128 at VGS = 4.5 V 3.6 Marking Code AN XXX Lot Traceability and Date Code Part # Code Ordering Information: Si3458BDV-T1-E3 (Lead (Pb)-free) Si3458BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G D S TSOP-6 Top View 6 4 1 2 3 5 3 mm 2.85 mm D D D D S G (1, 2, 5, 6) (3) (4) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 110 °C/W. d. Based on TC = 25 °C. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 4.1 A TC = 70 °C 3.2 TA = 25 °C 3.2a, b TA = 70 °C 2.5a, b Pulsed Drain Current IDM 10 Continuous Source-Drain Diode Current TC = 25 °C IS 2.9 TA = 25 °C 1.7a, b Maximum Power Dissipation TC = 25 °C PD 3.3 W TC = 70 °C 2.1 TA = 25 °C 2a, b TA = 70 °C 1.3a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t ≤ 5 s RthJA 53 62.5 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 32 38 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Applications • LED Backlight Switch • DC/DC Converter |
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