Vishay Siliconix

Si3458BDV

Document Number: 69501

S09-0660-Rev. B, 20-Apr-09

www.vishay.com

1

N-Channel 60-V (D-S) MOSFET

PRODUCT SUMMARY

d

60

4.1

3.5 nC

3.6

Marking Code

AN

XXX

Lot Traceability

and Date Code

Part # Code

Ordering Information: Si3458BDV-T1-E3 (Lead (Pb)-free)

Si3458BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

D

S

TSOP-6

Top View

6

4

1

2

3

5

3 mm

2.85 mm

D

D

D

D

S

G

(1, 2, 5, 6)

(3)

(4)

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 5 s.

c. Maximum under steady state conditions is 110 °C/W.

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

60

V

Gate-Source Voltage

± 20

4.1

A

3.2

Pulsed Drain Current

10

Continuous Source-Drain Diode Current

2.9

Maximum Power Dissipation

3.3

W

2.1

Operating Junction and Storage Temperature Range

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

≤ 5 s

53

62.5

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

32

38

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

•

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switch for Portable Applications

•

LED Backlight Switch

•

DC/DC Converter