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SI2324DS Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI2324DS Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page www.vishay.com Document Number: 63245 2 S11-1189-Rev. A, 27-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SPICE Device Model Si2324DS Vishay Siliconix Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS SIMULATED DATA MEASURED DATA UNIT Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.8 - V Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 1.5 A 0.199 0.195 VGS = 6 V, ID = 1 A 0.222 0.222 Forward Transconductancea gfs VDS = 20 V, ID = 4.6 A 3 2 S Body Diode Voltage VSD IS = 1.3 A 0.79 0.80 V Dynamicb Input Capacitance Ciss VDS = 20 V, VGS = 0 V, f = 1 MHz 190 190 pF Output Capacitance Coss 22 22 Reverse Transfer Capacitance Crss 15 13 Total Gate Charge Qg VDS = 50 V, VGS = 10 V, ID = 1.6 A 4.1 5.2 nC VDS = 50 V, VGS = 4.5 V, ID = 1.6 A 2.5 2.9 Gate-Source Charge Qgs 0.75 0.75 Gate-Drain Charge Qgd 1.4 1.4 |
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