SI2300DS datasheet(1/7 Pages) VISHAY

Part #	SI2300DS

Description	N-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si2300DS

New Product

Document Number: 65701

S10-0111-Rev. A, 18-Jan-10

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

DC/DC Converter for Portable Devices

•

Load Switch

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

Qg (Typ.)

30

0.068 at VGS = 4.5 V

3.6a

3 nC

0.085 at VGS = 2.5 V

3.4

G

S

D

Top View

2

3

TO-236

(SOT-23)

1

Si2300DS (P2)*

* Marking Code

Ordering Information: Si2300DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

D

S

Notes:

a. Package limited

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 130 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

3.6a

A

TC = 70 °C

3.0

TA = 25 °C

3.1b, c

TA = 70 °C

2.5b, c

Pulsed Drain Current

IDM

15

Continuous Source-Drain Diode Current

TC = 25 °C

IS

1.4

TA = 25 °C

0.9b, c

Maximum Power Dissipation

TC = 25 °C

PD

1.7

W

TC = 70 °C

1.1

TA = 25 °C

1.1b, c

TA = 70 °C

0.7b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

≤ 5 s

RthJA

90

115

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

60

75

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