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SI1926DL Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI1926DL Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 11 page www.vishay.com 2 Document Number: 73684 S10-0792-Rev. D, 05-Apr-10 Vishay Siliconix Si1926DL Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 60 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 56.7 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 3 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 10 V ± 150 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 µA VDS = 60 V, VGS = 0 V, TJ = 85 °C 10 On-State Drain Currenta ID(on) VDS = ≥ 10 V, VGS = 4.5 V 0.50 A VDS = ≥ 7.5 V, VGS = 10 V 0.65 Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 0.34 A 1.4 Ω VGS = 4.5 V, ID = 0.23 A 3 Forward Transconductance gfs VDS = 30 V, ID = 0.2 A 159 ms Dynamicb Input Capacitance Ciss VDS = 30 V, VGS = 0 V, f = 1 MHz 18.5 pF Output Capacitance Coss 7.5 Reverse Transfer Capacitance Crss 4.2 Total Gate Charge Qg VDS = 30 V, VGS = 10 V, ID = 0.34 A 0.9 1.4 nC VDS = 30 V, VGS = 4.5 V, ID = 0.34 A 0.5 0.75 Gate-Source Charge Qgs 0.2 Gate-Drain Charge Qgd 0.15 Gate Resistance Rg f = 1 MHz 160 240 Ω Turn-On Delay Time td(on) VDD = 30 V, RL = 100 Ω ID ≅ 0.3 A, VGEN = 10 V, Rg = 1 Ω 6.5 10 ns Rise Time tr 12 18 Turn-Off DelayTime td(off) 13 22 Fall Time tf 14 21 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 0.43 A Pulse Diode Forward Currenta ISM 0.65 Body Diode Voltage VSD IS = 0.3 A 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 0.6 A, dI/dt = 100 A/µs 16.5 25 nC Body Diode Reverse Recovery Charge Qrr 13 20 ns Reverse Recovery Fall Time ta 13.5 Reverse Recovery Rise Time tb 3 |
Similar Part No. - SI1926DL_10 |
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Similar Description - SI1926DL_10 |
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