www.vishay.com

4

Document Number: 67192

S10-2766-Rev. A, 29-Nov-10

Vishay Siliconix

Si1922EDH

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.7

0.9

1.1

1.3

1.5

1.7

- 50

- 25

0

25

50

75

100

125

150

T

0.0

0.1

0.2

0.3

0.4

123

45

V

0

1

5

Time (s)

3

4

0

0

6

110

0.1

0.01

2

100

Source-Drain Diode Forward Voltage

Threshold Voltage

Safe Operating Area, Junction-to-Ambient

0.0

0.3

0.6

0.9

1.2

1.5

10

1

100

V

0.20

0.35

0.50

0.65

0.80

- 50

- 25

0

25

50

75

100

125

150

T

10

0.1

0.1

1

10

1

Single Pulse

1ms

0.01

1s,10s

DC

100

10 ms

100 ms

100 μs

BVDSS Limited

V

* V