Document Number: 88737

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Revision: 22-Oct-09

3

SBYV28-50 thru SBYV28-200

Vishay General Semiconductor

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 5 - Reverse Switching Characteristics

Fig. 6 - Typical Junction Capacitance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0.01

0.1

1

10

100

Instantaneous Forward Voltage (V)

T

T

Pulse Width = 300 μs

1 % Duty Cycle

0

20

40

60

80

100

0.01

0.1

1

10

100

1000

Percent of Rated Peak Reverse Voltage (%)

T

T

0

25

50

75

100

125

150

175

0

10

20

30

40

50

60

Junction Temperature (°C)

I

V

dI/dt = 150 A/μs

dI/dt = 100 A/μs

dI/dt = 20 A/μs

dI/dt = 50 A/μs

t

rr

Q

rr

dI/dt = 150 A/μs

dI/dt = 100 A/μs

dI/dt = 20 A/μs

dI/dt = 50 A/μs

0.1

1

10

100

1

10

100

Reverse Voltage (V)

T

f = 1.0 MHz

V

DO-201AD

0.210 (5.3)

0.190 (4.8)

DIA.

0.052 (1.32)

0.048 (1.22)

DIA.

1.0 (25.4)

MIN.

1.0 (25.4)

MIN.

0.375 (9.5)

0.285 (7.2)