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BAT14-03W Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BAT14-03W
Description  Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BAT14-03W Datasheet(HTML) 2 Page - Siemens Semiconductor Group

   
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Semiconductor Group
2
Mar-01-1996
BAT 14-03W
Electrical Characteristics at
TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Breakdown voltage
I(BR) = 5 µA
V(BR)
4
-
-
V
Forward voltage
IF = 1 mA
IF = 10 mA
VF
0.48
0.36
0.55
0.43
0.66
0.52
Diode capacitance
VR = 0 , f = 1 MHz
CT
-
0.22
0.35
pF
Differential forward resistance
IF 10mA/ 50 mA
RF
-
5.5
-
Diode capacitance
CT = f (VR)
f = 1MHz
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
5.0
V
R
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
pF
0.50
C
T


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