MJE802 datasheet(1/3 Pages) ISC

Part #	MJE802

Description	Silicon NPN Power Transistors

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

MJE800/801/802/803

DESCRIPTION

・

・With TO-126 package

・Complement to type MJE700/701/702/703

・High DC current gain

・DARLINGTON

APPLICATIONS

・Designed for general–purpose amplifier

and low–speed switching applications

PINNING (see Fig.2)

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute Maximun Ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

MJE800/801

60

VCBO

Collector-base voltage

MJE802/803

Open emitter

80

V

MJE800/801

60

VCEO

Collector-emitter voltage

MJE802/803

Open base

80

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

4

A

IB

Base current

0.1

A

PC

Collector power dissipation

TC=25℃

40

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

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