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BAS125W Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BAS125W Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 5 page Semiconductor Group 1 Dec-20-1996 BAS 125W Preliminary data Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage BAS 125-04W BAS 125-04W BAS 125-06W ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package BAS 125-04W 14s Q62702- 1 = A1 2 = C2 3=C1/A2 SOT-323 BAS 125-05W 15s Q62702- 1 = A1 2 = A2 3=C1/C2 SOT-323 BAS 125-06W 16s Q62702- 1 = C1 2 = C2 3=A1/A2 SOT-323 BAS 125W 13s Q62702- 1 = A 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage VR 25 V Forward current IF 100 mA Surge forward current ( t ≤ 10ms) IFSM 500 Total Power dissipation TS ≤ 25 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg - 55 ... + 150 Thermal Resistance Junction ambient, BAS125W 1) RthJA ≤ 310 K/W Junction ambient, BAS 125-04W...06W 1) RthJA ≤ 425 Junction - soldering point, BAS125W RthJS ≤ 230 Junction - soldering point, BAS125-04W...06W RthJS ≤ 265 1) Package mounted on alumina 15mm x 16.7mmm x 0.7mm |
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