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SIHFZ44STR-E3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIHFZ44STR-E3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com Document Number: 91293 2 S11-1063-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Note a. When mounted on 1” square PCB (FR-4 or G-10 material). Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. Uses IRFZ44, SiHFZ44 data and test conditions. d. Calculated continuous current based on maximum allowable junction temperature. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient (PCB Mounted, steady-state)a RthJA -40 °C/W Maximum Junction-to-Case RthJC -1.0 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 60 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.06 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V - - 25 μA VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 31 Ab - - 0.028 Forward Transconductance gfs VDS = 25 V, ID = 31 Ab 15 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 d - 1900 - pF Output Capacitance Coss - 920 - Reverse Transfer Capacitance Crss - 170 - Total Gate Charge Qg VGS = 10 V ID = 51 A, VDS = 48 V, see fig. 6 and 13b -- 67 nC Gate-Source Charge Qgs -- 18 Gate-Drain Charge Qgd -- 25 Turn-On Delay Time td(on) VDD = 30 V, ID = 51 A, Rg = 9.1 , RD = 0,55 , see fig. 10b -14 - ns Rise Time tr - 110 - Turn-Off Delay Time td(off) -45 - Fall Time tf -92 - Internal Source Inductance LS Between lead, and center of die contact - 7.5 - nH Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 50d A Pulsed Diode Forward Currenta ISM - - 200 Body Diode Voltage VSD TJ = 25 °C, IS = 51 A, VGS = 0 Vb -- 2.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 51 A, dI/dt = 100 A/μsb, d - 120 180 ns Body Diode Reverse Recovery Charge Qrr - 530 800 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) S D G |
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