Document Number: 91295

www.vishay.com

S11-0518-Rev. B, 21-Mar-11

1

This datasheet is subject to change without notice.

Power MOSFET

IRFZ48R, SiHFZ48R

Vishay Siliconix

FEATURES

• Advanced Process Technology

• Ultra Low On-Resistance

• Dynamic dV/dt Rating

• 175 °C Operating Temperature

•Fast Switching

• Fully Avalanche Rated

• Drop in Replacement of the SiHFZ48 for Linear/Audio

Applications

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Advanced Power MOSFETs from Vishay utilize advanced

processing

techniques

to

achieve

extremely

low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

The TO-220AB package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

60

0.018

110

29

36

Configuration

Single

N-Channel MOSFET

G

D

S

TO-220AB

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

TO-220AB

Lead (Pb)-free

IRFZ48RPbF

SiHFZ48R-E3

SnPb

IRFZ48R

SiHFZ48R

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

60

V

Gate-Source Voltage

± 20

Continuous Drain Current

50

A

50

290

Linear Derating Factor

1.3

W/°C

100

mJ

50

A

19

mJ

Maximum Power Dissipation

190

W

dV/dt

4.5

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 175

°C

Soldering Recommendations (Peak Temperature)

for 10 s

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply