www.vishay.com

Document Number: 91340

2

S10-1682-Rev. A, 26-Jul-10

IRFZ20, SiHFZ20

Vishay Siliconix

Notes

a. Repeditive rating: Pulse width limited by max. junction temperature. See transient temperature impedance curve (see fig. 5).

b. Pulse test: Pulse width

 300 μs; duty cycle  2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Typical Socket Mount, Junction-to-Ambient

-80

°C/W

Case-to-Sink, Mounting Surface Flat, Smooth, and Greased

1.0

-

Junction-to-Case

-3.12

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

50

-

-

V

Gate-Source Threshold Voltage

2.0

-

4.0

V

Gate-Source Leakage

-

-

± 500

nA

Zero Gate Voltage Drain Current

-

-

250

μA

-

-

1000

On-State Drain Current

-

-

15

A

-

0.080

0.10



5.0

6.0

-

S

Dynamic

Input Capacitance

f = 1.0 MHz, see fig. 11

-

560

860

pF

Output Capacitance

-

250

350

Reverse Transfer Capacitance

-

60

100

Total Gate Charge

rating, see fig. 18 for test

circuit (Gate charge is

essentially independent of

operating temperature)

-12

17

nC

Gate-Source Charge

-9.0

-

Gate-Drain Charge

-3.0

-

Turn-On Delay Time

-15

30

ns

Rise Time

-45

90

Turn-Off Delay Time

-20

40

Fall Time

-15

30

Internal Drain Inductance

Modified MOSFET

symbol showing the

internal device

inductances

-3.5

-

nH

Internal Source Inductance

-4.5

-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction rectifier

--

15

A

--

60

-

-

1.5

V

Body Diode Reverse Recovery Time

-

100

-

ns

Body Diode Reverse Recovery Charge

-0.4

-

μC

Forward Turn-On Time

D

S

G

S

D

G