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IRFR010 Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. IRFR010
Description  Power MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRFR010 Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number: 91420
2
S10-1510-Rev. A, 19-Jul-10
IRFR010, SiHFR010
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
 300 μs; duty cycle  2 %.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-
-
110
°C/W
Case-to-Sink
RthCS
-1.7
-
Maximum Junction-to-Case (Drain)
RthJC
--
5.0
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
50
-
-
V
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 500
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 50 V, VGS = 0 V
-
-
250
μA
VDS = 40 V, VGS = 0 V, TJ = 125 °C
-
-
1000
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID = 4.6 Ab
-
0.16
0.20
Forward Transconductance
gfs
VDS  50 V, ID = 3.6 A
2.1
3.1
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 10
-
250
-
pF
Output Capacitance
Coss
-
150
-
Reverse Transfer Capacitance
Crss
-29
-
Total Gate Charge
Qg
VGS = 10 V
ID = 7.3 A, VDS = 40 V,
see fig. 6 and 13b
-6.7
10
nC
Gate-Source Charge
Qgs
-1.8
2.6
Gate-Drain Charge
Qgd
-3.2
4.8
Turn-On Delay Time
td(on)
VDD = 25 V, ID = 7.3 A,
Rg = 24 , RD = 3.3 , see fig. 10b
-11
17
ns
Rise Time
tr
-33
50
Turn-Off Delay Time
td(off)
-12
18
Fall Time
tf
-23
35
Internal Drain Inductance
LD
Between lead,
6 mm (0.25") from
package and center of
die contactc
-4.5
-
nH
Internal Source Inductance
LS
-7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
8.2
A
Pulsed Diode Forward Currenta
ISM
--
33
Body Diode Voltage
VSD
TJ = 25 °C, IS = 8.2 A, VGS = 0 Vb
--
1.6
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 7.3 A, dI/dt = 100 A/μsb
41
86
190
ns
Body Diode Reverse Recovery Charge
Qrr
0.15
0.33
0.78
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G


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