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SIHF530STL-E3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SIHF530STL-E3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com Document Number: 91020 4 S11-1046-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF530S, SiHF530S Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 1400 1200 1000 800 0 400 600 100 101 VDS, Drain-to-Source Voltage (V) C iss C rss C oss V GS = 0 V, f = 1 MHz C iss = Cgs + Cgd, Cds Shorted C rss = Cgd C oss = Cds + Cgd 91020_05 200 QG, Total Gate Charge (nC) 20 16 12 8 0 4 0 5 25 20 15 10 I D = 14 A V DS = 20 V V DS = 50 V For test circuit see figure 13 V DS = 80 V 91020_06 101 100 VSD, Source-to-Drain Voltage (V) 0.4 2.0 1.6 1.2 0.8 25 °C 175 °C V GS = 0 V 91020_07 102 10 µs 100 µs 1 ms 10 ms Operation in this area limited by R DS(on) VDS, Drain-to-Source Voltage (V) T C = 25 °C T J = 175 °C Single Pulse 0.1 103 0.1 2 5 1 2 5 10 2 5 2 5 25 1 25 10 25 102 25 103 91020_08 |
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