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TIG111GMH Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part No. TIG111GMH
Description  High Power High Speed Switching Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

TIG111GMH Datasheet(HTML) 2 Page - Sanyo Semicon Device

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TIG111GMH
No.9014-2/5
Electrical Characteristics at Tj=25°C, Unless otherwise specified
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector-to-Emitter Breakdown Voltage
V(BR)CES
IC=1mA, VGE=0V
600
V
Collector-to-Emitter Cutoff Current
ICES
VCE=600V, VGE=0V
Tj=25°C
100
μA
Tj=125°C1
mA
Gate-to-Emitter Leakage Current
IGES
VGE=±30V, VCE=0V
±100
nA
Gate-to-Emitter Threshold Voltage
VGE(off)
VCE=10V, IC=1mA
4.0
5.0
6.0
V
Collector-to-Emitter Saturation Voltage
VCE(sat)1
VGE=15V, IC=10A
Tj=25°C
1.6
2.0
V
Tj=125°C
1.7
V
VCE(sat)2
VGE=15V, IC=25A
Tj=25°C
2.2
V
Input Capacitance
Cies
VCE=30V, f=1MHz
1880
pF
Output Capacitance
Coes
30
pF
Reverse Transfer Capacitance
Cres
22
pF
Turn-ON Delay Time
td(on)
L=200μH, VGE=15V, IC=10A, VCC=300V,
Rg=30Ω, See specified Test Circuit.
43
ns
Rise Time
tr
25
ns
Turn-ON Time
ton
250
ns
Turn-OFF Delay Time
td(off)
175
ns
Fall Time
tf
115
ns
Turn-OFF Time
toff
360
ns
Total Gate Charge
Qg
VCE=300V, VGE=15V, IC=10A
63
nC
Gate-to-Source Charge
Qgs
12
nC
Gate-to-Drain “Miller” Charge
Qgd
22
nC
Thermal Characteristics at Ta=25°C, Unless otherwise specified
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Thermal Resistance (Junction- Case)
Rth(j-c)
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
2.27
°C / W
Thermal Resistance (Junction- at mosphere)
Rth(j-a)
41.7
°C / W
Switching Time Test Circuit
Timing Chart
90%
0
90%
0
10%
10%
VGE
VCE
IC
10%
10%
90%
10%
toff
td(off)
tf
tr
td(on)
ton
IT16383
Diode
RG
VCC
TIG111GMH
15V
0V
VGE
VCLAMP=600V
L


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