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BU126 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU126 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BU126 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0; 300 V V(BR)EBO Emitter-base breakdown votage IE=1mA; IC=0 6 V VCEsat-1 Collector-emitter saturation voltage IC=2.5 A;IB=0.25A 10 V VCEsat-2 Collector-emitter saturation voltage IC=4 A;IB=1A 5.0 V VBEsat Base-emitter saturation voltage IC=4A;IB=1A 1.5 V ICES Collector cut-off current VCE=750V;VBE=0 Ta=125℃ 0.5 2 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=5V 15 COB Output capacitance IE=0; VCB=10V;f=0.5MHz 75 pF fT Transition frequency IC=0.2 A ; VCE=10V 10 MHz tf Fall time IC=2.5A ;IB=0.25A 0.2 μs |
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