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6N138 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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6N138 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
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5–2 6N139/139 Electro-Optical Characteristics (TA=0°C to 70°C, TA=25°C–Typical, unless otherwise specified) Switching Specifications (TA=25°C) Notes 1.Derate linearly above 50 °C free-air temperature at a rate of 0.4 mA/°C. 2.Derate linearly above 50 °C free-air temperature at a rate of 0.7 mW/°C. 3.Derate linearly above 25 °C free-air temperature at a rate of 0.7 mA/°C. 4.Derate linearly above 25 °C free-air temperature at a rate of 2.0 mW/°C. 5.DC current transfer ratio is defined as the ratio of outpput collector current, IO, to the forward LED input current, IF times 100%. 6.Pin 7 open. 7.Device considered a two-terminal device: pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted together. 8.Using a resistor between pin 5 and 7 will decrease gain and delay time. 9.Common mode transient immunity in logic high level is the maximum tolerable (positive) dVcm/dt on the leading edge of the common mode pulse, VCM, to assure that the output will remain in a logic high state (i.e. VO>2.0 V) common mode transient immunity in logic low level is the maximum tolerable (negative) dVcm/dt on the trailing edge of the common mode pulse signal, VCM, to assure that the output will remain in a logic low state (i.e. VO<0.8 V). 10.In applications where dv/dt may exceed 50,000 V/ µs (such as state discharge) a series resistor, R CC should be included to protect IC from destructively high surge currents. The recommended value is Parameter Symbol Device Min . Typ. Max. Units Test Conditions Note Current Transfer Ratio CTR 6N138 300 1600 % IF=1.6 mA, VO=0.4 V, VCC=4.5 V 5.6 6N139 400 500 1600 2000 %IF=0.5 mA, VO=0.4 V, VCC=4.5 V IF=1.6 mA, VO=0.4 V, VCC=4.5 V 5.6 Logic Low 6N138 0.1 0.4 V IF=1.6 mA, IO=4.8 mA, VCC=4.5 V 6 Output Voltage VOL 6N139 6N139 6N139 0.1 0.15 0.25 0.4 0.4 0.4 VIF=1.6 mA, IO=8 mA, VCC=4.5 V IF=5 mA, IO=15 mA, VCC=4.5 V IF=12 mA, IO=24 mA, VCC=4.5 V 6 Logic High 6N138 0.1 250 µAI F=0 mA, VO=VCC=7 V 6 Output Current IOH 6N139 0.05 100 µAI F=0 mA, VO=VCC=18 V 6 Logic Low Supply Current ICCL 0.2 1.5 mA IF=1.6 mA, VO=OPEN, VCC=18 V 6 Logic High Supply Current ICCH 0.001 10 µAI F=0 mA, VO=OPEN, VCC=18 V 6 Input Forward Voltage VF 1.4 1.7 V IF=1.6 mA, TA=25°C Input Reverse Breakdown Voltage BVR 5V IR=10 µA Temperature Coefficient of Forward Voltage -1.8 mV/ °CI F=1.6 mA Input Capacitance CIN 25 pF f=1 MHz, VF=0 Input-Output Insulation Leakage Current I-0 1.0 µA 45% Relative Humidity, TA=25°C t=5S, V1-0=3000 VDC 7 Resistance (Input-Output) RI-O 10 12 Ω VIO=500 VDC 7 Capacitance (Input-Output) CI-O 0.6 pF f=1 MHz 7 Parameter Symbol Device Min . Typ. Max. Units Test Conditions Note Propagation Delay Time 6N138 2 10 µSI F=1.6 mA, RL=2.2 KΩ To Logic Low at Output tPHL 6N139 6 0.6 25 1 µSI F=0.5 mA, RL=4.7 KΩ IF=12 mA, RL=270 Ω 6,8 Propagation Delay Time 6N138 2 35 µSI F=1.6 mA, RL=2.2 KΩ To Logic High at Output tPLH 6N139 4 1.5 60 7 µS IF=0.5 mA, RL=4.7 KΩ IF=12 mA, RL=270 Ω 6,8 Common Mode Transient Immunity at Logic High Level Output CMH 500 V/ µSI F=0 mA, RL=2.2 KΩ RCC=0/VCM/=10 Vp-p 9,10 Common Mode Transient Immunity at Logic Low Level Ouput CML –500 V/ µSI F=1.6 mA, RL=2.2 KΩ RCC=0/VCM/=10 Vp-p 9,10 R CC IV 0.15I F mA () --------------------------------- k Ω ≅ |
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