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STL24NM60N Datasheet(PDF) 1 Page - STMicroelectronics |
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STL24NM60N Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 14 page November 2011 Doc ID 18363 Rev 2 1/14 14 STL24NM60N N-channel 600 V, 0.200 Ω, 16 A PowerFLAT™ 8x8 HV MDmesh™ II Power MOSFET Features ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Type VDSS @ TJmax RDS(on) max ID STL24NM60N 650 V < 0.215 Ω 16 A (1) 1. The value is rated according to Rthj-case Table 1. Device summary Order code Marking Package Packaging STL24NM60N 24NM60N PowerFLAT™ 8x8 HV Tape and reel www.st.com |
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