STL21N65M5 datasheet(3/14 Pages) STMICROELECTRONICS

Part #	STL21N65M5

Description	N-channel 650 V, 0.175 廓, 17 A PowerFLAT??(8x8) HV ultra low gate charge MDmesh??V Power MOSFET

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STL21N65M5

Electrical ratings

Doc ID 17438 Rev 4

3/14

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

650

V

VGS

Gate-source voltage

± 25

V

ID

(1)

1.

The value is rated according to Rthj-case.

Drain current (continuous) at TC = 25 °C

17

A

ID

(1)

Drain current (continuous) at TC = 100 °C

11

A

IDM

(1),(2)

2.

Pulse width limited by safe operating area.

Drain current (pulsed)

68

A

ID

(3)

3.

When mounted on FR-4 board of inch², 2oz Cu.

Drain current (continuous) at TC = 25 °C

2.7

A

ID

(3)

Drain current (continuous) at TC = 100 °C

1.7

A

IDM

(2),(3)

Drain current (pulsed)

10.8

A

PTOT

(3)

Total dissipation at TC = 25 °C (steady state)

3

W

PTOT

(1)

Total dissipation at TC = 25 °C (steady state)

125

W

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

5A

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

400

mJ

dv/dt (4)

4.

ISD ≤ 17 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS, VDD = 400 V.

Peak diode recovery voltage slope

15

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Tj

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

1

°C/W

Rthj-amb

(1)

1.

When mounted on 1inch² FR-4 board, 2 oz Cu

Thermal resistance junction-amb max

45

°C/W

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