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BDT63B Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # BDT63B
Description  isc Silicon NPN Darlington Power Transistor
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDT63B Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BDT63/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BDT63
60
BDT63A
80
BDT63B
100
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDT63C
IC= 30mA ;IB=0
B
120
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 3A; IB= 12mA
B
2.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 8A; IB= 80mA
B
2.5
V
VBE(on)
Base-Emitter On Voltage
IC= 3A ; VCE= 3V
2.5
V
VECF
C-E Diode Forward Voltage
IF= 3A
2.0
V
ICEO
Collector Cutoff Current
VCE=
1/
2VCEOmax; IB= 0
0.5
mA
ICBO
Collector Cutoff Current
VCB= VCBOmax;IE= 0
VCB=
1/
2VCBOmax;IE= 0;TC= 150℃
0.2
2.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
5
mA
hFE-1
DC Current Gain
IC= 3A ; VCE= 3V
1000
hFE-2
DC Current Gain
IC= 10A ; VCE= 3V
3000
COB
Output Capacitance
IE= 0 ; VCB= 10V; ftest= 1MHz
100
pF
Switching times
ton
Turn-On Time
1.0
2.5
μs
toff
Turn-Off Time
IC= 3A; IB1= -IB2= 12mA;
VCC= 10V
5.0
10
μs
isc Website:www.iscsemi.cn
2


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