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BDT62B Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # BDT62B
Description  isc Silicon PNP Darlington Power Transistors
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDT62B Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistors
BDT62/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BDT62
-60
BDT62A
-80
BDT62B
-100
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDT62C
IC= -30mA; IB= 0
-120
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -3A; IB= -12mA
B
-2.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -8A; IB= -80mA
B
-2.5
V
VBE(on)
Base-Emitter On Voltage
IC= -3A; VCE= -3V
-2.5
V
BDT62
VCB= -60V; IE= 0
VCB= -30V; IE= 0; TJ=150℃
-0.2
-2.0
BDT62A
VCB= -80V; IE= 0
VCB= -40V; IE= 0; TJ=150℃
-0.2
-2.0
BDT62B
VCB= -100V; IE= 0
VCB= -50V; IE= 0; TJ=150℃
-0.2
-2.0
ICBO
Collector
Cutoff Current
BDT62C
VCB= -120V; IE= 0
VCB= -60V; IE= 0; TJ=150℃
-0.2
-2.0
mA
BDT62
VCE= -30V; IB= 0
B
-0.5
BDT62A
VCE= -40V; IB= 0
B
-0.5
BDT62B
VCE= -50V; IB= 0
B
-0.5
ICEO
Collector
Cutoff Current
BDT62C
VCE= -60V; IB= 0
B
-0.5
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-5
mA
hFE-1
DC Current Gain
IC= -3A; VCE= -3V
1000
hFE-2
DC Current Gain
IC= -10A; VCE= -3V
200
VECF
C-E Diode Forward Voltage
IE= -3A
-2.0
V
Switching Times
ton
Turn-On Time
0.5
μs
toff
Turn-Off Time
IC= -3A; IB1= -IB2= -12mA
2.5
μs
isc Website:www.iscsemi.cn


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