LE25CB1282M

No.NA1503-13/13

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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.

products described or contained herein.

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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural

design.

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above.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed

for volume production.

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product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the

SANYO Semiconductor Co.,Ltd. product that you intend to use.

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Application Note

1) Precautions at Power-on

In order to protect against unintentional writing, the LE25CB1282M incorporates a power-on rest circuit. The

following conditions must be met in order to ensure that the power-on reset circuit will operate stably. No guarantees

are given for data in the event of an instantaneous power failure occurring during the write operation.

Symbol

Item

VDD = 2.7 to 5.5V

Unit

min

typ

max

tRISE

Power rise time

100

ms

tOFF

Power off time

10

ms

Vbot

Power bottom voltage

0.2

V

VDD

tOFF

Vbot

tRISE

0V

Note:

1). The CS pin must be set high.

This catalog provides information as of June, 2011. Specifications and information herein are subject to change

without notice.