DG9052 datasheet(6/13 Pages) VISHAY

Part #	DG9052

Description	Precision 8-Ch/Dual 4-Ch/Triple 2-Ch Low Voltage Analog Switches/Multiplexers

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 73410

S11-1066-Rev. B, 30-May-11

Vishay Siliconix

DG9051, DG9052, DG9053

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes:

a. Leakage parameters are guaranteed by worst case test condition and not subject to production test.

b. Room = 25°C, Full = as determined by the operating temperature suffix.

c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.

d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

e. Guaranteed by design, not subject to production test.

f. VIN = input voltage to perform proper function.

g.

RDON = RDON Max - RDON Min.

h. Worst case isolation occurs on Channel 4 due to proximity to the drain pin.

i. RDON flatness is measured as the difference between the minimum and maximum measured values across a defined Analog signal.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (Single Supply 3 V)

Parameter

Symbol

Test Condition

Unless Otherwise Specified

V + = 3 V, ± 10 %, V - = 0 V

VEN = 0.4 V or 2 V

Temp.b

Limits

- 40 °C to 85°C

Unit

Min.c

Typ.d

Max.c

Analog Switch

Analog Signal Rangee

VANALOG

Full

0

3

V

On-Resistance

RON

V + = 2.7 V, VD = 1.5 V, IS = 0.1 mA

Room

130



RON Match Between Channels

g

RON

V + = 2.7 V, VD = 1.5 V, IS = 0.1 mA

Room

12

Switch Off Leakage Currenta

IS(off)

V + = 3.3 V, VEN = 2 V

VS = 3 or 0.3 V, VD = 0.3 or 3 V

Room

Full

- 1

- 20

1

20

nA

ID(off)

Room

Full

- 1

- 20

1

20

Channel On Leakage Currenta

ID(on)

V + = 3.3 V, VEN = 0 V

VS = 3 or 0.3 V, VD = 0.3 or 3 V

Room

Full

- 2

- 10

2

10

Digital Control

Logic High Input Voltage

VINH

Full

2

V

Logic Low Input Voltage

VINL

Full

0.4

Input Currenta

IIN

VAX = VEN = 2 V or 0.4 V

Full

- 1

1

µA

Dynamic Characteristics

Transition Time

tTRANS

V + = 2.7 V, VNO/NC = 1.5 V/0 V, 0 V/1.5 V

RL = 300 , CL = 35 pF

Room

80

ns

Break-Before-Make Time

tBBM

V + = 2.7 V, VX,Y, Z = 1.5 V, VS = 0 V,

RL = 300 , CL = 35 pF

Room

Full

5

25

Enable Turn-On Time

tON(EN)

Room

90

Enable Turn-Off Time

tOFF(EN)

Room

30

Charge Injectione

Q

CL = 1 nF, VGEN = 0 V, RGEN = 0 

Room

9

pC

Off-Isolatione,h

OIRR

f = 1 MHz, RL = 50 

Room

- 78

dB

Crosstalke

XTALK

Room

- 83

Source Off Capacitancee

CS(off)

f = 1 MHz, VS = 0 V, VEN = 1.8 V

Room

5

pF

Drain Off Capacitancee

CD(off)

f = 1 MHz, VD = 0 V, VEN = 1.8 V

Room

10

Drain On Capacitancee

CD(on)

f = 1 MHz, VD = 0 V, VEN = 0 V

Room

15

Power Supply

Power Supply Current

I+

VEN = VA = 0 V or V +

Room

1

µA

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