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Document Number: 73404

S11-1185-Rev. D, 13-Jun-11

Vishay Siliconix

DG3516, DG3517

This document is subject to change without notice.

Notes:

a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.

b. Refer to IPC/JEDEC (J-STD-020B).

c. All bumps welded or soldered to PC board.

d. Derate 5.7 mW/°C above 70 °C.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

ABSOLUTE MAXIMUM RATINGS

Parameter

Limit

Unit

Reference V+ to GND

- 0.3 to + 6

V

- 0.3 to (V+ + 0.3)

Continuous Current (NO, NC, COM)

± 100

mA

Peak Current (Pulsed at 1 ms, 10 % duty cycle)

± 200

Storage Temperature

(D Suffix)

- 65 to 150

°C

IR/Convection

250

ESD per Method 3015.7

> 2

kV

457

mW

SPECIFICATIONS (V+ = 3 V)

Parameter

Symbol

Test Conditions

Otherwise Unless Specified

e

Limits

- 40 °C to 85 °C

Unit

Analog Switch

Full

0

V+

V

V+ = 2.7 V

Room

Full

2.5

3.5

3.8



d

Flatness

Room

0.52

1

On-Resistance

Room

0.25

Switch Off Leakage Current

V+ = 3.3 V,

Room

Full

- 2

- 20

2

20

nA

Room

Full

- 2

- 20

2

20

Channel-On Leakage Current

Room

Full

- 2

- 20

2

20

Digital Control

Full

1.4

V

Input Low Voltage

Full

0.5

Input Capacitance

Full

5

pF

Input Current

Full

1

1

µA