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2SD864 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD864 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD864 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA, RBE= ∞ 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA , IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A, IB= -3mA 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A, IB= -30mA B 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 1.5A, IB= -3mA 2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 3A, IB= -30mA B 3.5 V ICBO Collector Cutoff Current VCB= 120V, IE= 0 100 μA ICEO Collector Cutoff Current VCE= 100V, RBE= ∞ 10 μA hFE DC Current Gain IC= 1.5A; VCE= 3V 1000 20000 Switching times ton Turn-on Time 0.5 μs tstg Storage Time 4.5 μs tf Fall Time IC= 1.5A; IB1= -IB2= 3mA 1.1 μs isc Website:www.iscsemi.cn |
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