Electronic Components Datasheet Search |
|
2SD845 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
2SD845 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD845 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=0.1A; IB=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=5 A;IB=0.5 A 2.0 V VBE Base-emitter on voltage IC=5A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=150V; IE=0 -50 μA IEBO Emitter cut-off current VEB=5V; IC=0 -50 μA hFE DC current gain IC=1A ; VCE=5V 55 160 fT Transition frequency IC=1A ; VCE=10V 20 MHz hFE classifications R O 55-110 80-160 |
Similar Part No. - 2SD845 |
|
Similar Description - 2SD845 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |