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DG444 Datasheet(PDF) 2 Page - Vishay Siliconix |
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DG444 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 12 page www.vishay.com 2 Document Number: 70054 S11-0984-Rev. G, 23-May-11 Vishay Siliconix DG444, DG445 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 6 mW/°C above 75°C. d. Derate 8 mW/°C above 75°C. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Limit Unit V+ to V- 44 V GND to V- 25 VL (GND - 0.3) to (V+) + 0.3 Digital Inputsa, VS, VD (V-) - 2 to (V+) + 2 or 30 mA, whichever occurs first Continuous Current (Any Terminal) 30 mA Current, S or D (Pulsed at 1 ms, 10 % Duty Cycle ) 100 Storage Temperature - 65 to 125 °C Power Dissipation (Package)b 16-Pin Plastic DIPc 450 mW 16-Pin Narrow Body SOICd 640 SPECIFICATIONS for Dual Supplies Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V VL = 5 V, VIN = 2.4 V, 0.8 V e Temp.a D Suffix - 40 °C °C to 85 °C Unit Min.b Typ.c Max.b Analog Switch Analog Signal Ranged VANALOG Full - 15 15 V Drain-Source On-Resistance RDS(on) IS = - 10 mA, VD = ± 8.5 V V+ = 13.5 V V- = - 13.5 V Room Full 50 85 100 Switch Off Leakage Current IS(off) V+ = 16.5, V- = - 16.5 V VD = ± 15.5 V, VS = ± 15.5 V Room Full - 0.5 - 5 ± 0.01 0.5 5 nA ID(off) Room Full - 0.5 - 5 ± 0.01 0.5 5 Channel On Leakage Current ID(on) V+ = 16.5 V, V- = - 16.5 V VS = VD = ± 15.5 V Room Full - 0.5 - 10 ± 0.08 0.5 10 Digital Control Input Current VIN Low IIL VIN under test = 0.8 V All Other = 2.4 V Full - 500 - 0.01 500 nA Input Current VIN High IIH VIN under test = 2.4 V All Other = 0.8 V Full - 500 0.01 500 Dynamic Characteristics Turn-On Time tON RL = 1 k, CL = 35 pF VS = ± 10 V, See Figure 2 Room 120 250 ns Turn-Off Time tOFF DG444 Room 110 140 DG445 Room 160 210 Charge Injectione Q CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 Room - 1 pC Off Isolatione OIRR RL = 50 , CL = 5 pF, f =1 MHz Room 60 dB Crosstalk (Channel-to-Channel) d XTALK Room 100 Source Off Capacitance CS(off) f = 1 MHz Room 4pF Drain Off Capacitance CD(off) Room 4 Channel On Capacitance CD(on) VANALOG = 0 V Room 16 |
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Similar Description - DG444_11 |
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