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DG412DY-E3 Datasheet(PDF) 6 Page - Vishay Siliconix |
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DG412DY-E3 Datasheet(HTML) 6 Page - Vishay Siliconix |
6 / 14 page www.vishay.com 6 Document Number: 70050 S11-1185-Rev. G, 13-Jun-11 Vishay Siliconix DG411, DG412, DG413 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) SCHEMATIC DIAGRAM (Typical Channel) TEST CIRCUITS Supply Current vs. Input Switching Frequency f - Frequency (Hz) 100 mA 10 mA 1 mA 100 µA 10 µA 1 µA 100 nA 10 nA 100 1K 10K 100K 1M 10M I+, I- IL V+ = 15 V V- = - 15 V VL = 5 V = 1 SW = 4 SW 10 Figure 1. Level Shift/ Drive VIN VL S V+ GND V- D V- V+ Figure 2. Switching Time 0 V Logic Input Switch Input* Switch Output 3 V 50 % 0 V Switch Input* VS tr < 20 ns tf < 20 ns 90 % - VS tON tON VO 90 % VO * VS = 10 V for tON, VS = - 10 V for tOFF Note: Logic input waveform is inverted for switches that have the opposite logic sense control CL (includes fixture and stray capacitance) V+ IN RL RL + rDS(on) VO = VS S D - 15 V VO GND ± 10 V VL CL 35 pF V- RL 300 + 15 V + 5 V |
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