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CQY36N Datasheet(PDF) 1 Page - Vishay Siliconix |
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CQY36N Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Document Number: 81001 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 1.8, 16-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs CQY36N Vishay Semiconductors DESCRIPTION CQY36N is an infrared, 950 nm emitting diode in GaAs technology molded in a miniature, clear plastic package without lens. FEATURES • Package type: leaded • Package form: T-¾ • Dimensions (in mm): Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity: = ± 55° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Package matches with detector BPW16N • Compliant to RoHS Directive 2002/95/EC and in accordance with WEEE 2002/96/EC APPLICATIONS • Radiation source in near infrared range Note • Test conditions see table “Basic Characteristics“ Note • MOQ: minimum order quantity 94 8638 PRODUCT SUMMARY COMPONENT Ie (mW/sr) (deg) P (nm) tr (ns) CQY36N 1.5 ± 55 950 800 ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM CQY36N Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-¾ ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5V Forward current IF 100 mA Surge forward current tp 100 μs IFSM 2A Power dissipation PV 160 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 25 to + 85 °C Storage temperature range Tstg - 25 to + 100 °C Soldering temperature t 3 s Tsd 245 °C Thermal resistance junction/ambient leads not soldered RthJA 450 K/W |
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