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Document Number: 94489

2

Revision: 01-Sep-08

CPV364M4UPbF

Vishay High Power Products

IGBT SIP Module

(Ultrafast IGBT)

Notes

≤ 80 µs, duty factor ≤ 0.1 %

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TYP.

MAX.

UNITS

Junction to case, each IGBT, one IGBT in conduction

-

2.0

°C/W

Junction to case, each DIODE, one DIODE in conduction

-

3.0

Case to sink, flat, greased surface

0.10

-

Weight of module

20

-

g

0.7

-

oz.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Collector to emitter breakdown voltage

600

-

-

V

Temperature coefficient of

breakdown voltage

ΔV

-

0.63

-

V/°C

Collector to emitter saturation voltage

See fig. 2, 5

-

1.56

2.1

V

-

1.84

-

-

1.56

-

Gate threshold voltage

3.0

-

6.0

Temperature coefficient of

threshold voltage

ΔV

-

- 13

-

mV/°C

Forward transconductance

11

18

-

S

Zero gate voltage collector current

-

-

250

µA

-

-

3500

Diode forward voltage drop

See fig. 13

-1.3

1.7

V

-

1.2

1.6

Gate to emitter leakage current

-

-

± 100

nA