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2SC3749 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3749 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3749 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 500 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.5 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 0.3A; VCE= 5V 15 50 hFE-2 DC Current Gain IC= 1.5A; VCE= 5V 8 COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz 50 pF fT Current-Gain—Bandwidth Product IC= 0.3A; VCE= 10V 18 MHz Switching times ton Turn-on Time 0.5 μs tstg Storage Time 3.0 μs tf Fall Time IC= 2A, IB1= 0.4A; IB2= -0.8A; RL= 100Ω; VCC= 200V 0.3 μs hFE-1 Classifications L M N 15-30 20-40 30-50 isc Website:www.iscsemi.cn 2 |
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