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2SC3657 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part No. 2SC3657
Description  isc Silicon NPN Power Transistor
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC3657 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3657
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min)
·Fast Switching Speed
APPLICATIONS
·Switching regulator and high voltage switching applications
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
8
A
IB
B
Base Current-Continuous
2
A
IBM
Base Current-Peak
5
A
PC
Collector Power Dissipation
@ TC=25℃
80
W
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn


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