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2SC3505 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part No. 2SC3505
Description  Silicon NPN Power Transistors
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Maker  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
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2SC3505 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

   
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2SC3505
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
700
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
900
V
VCEsat
Collector-emitter saturation voltage
IC=2A ;IB=0.4A
0.5
V
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=0.4A
1.2
V
ICBO
Collector cut-off current
VCB=900V; IE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=10V; IC=0
1.0
mA
hFE
DC current gain
IC=2A ; VCE=5V
10
Switching times
ton
Turn-on time
1.0
μs
tstg
Storage time
5.0
μs
tf
Fall time
IC=3A;IB1=0.6A;IB2=-1.2A
RL=100Ω,PW=20μs
Duty≤2%
1.0
μs


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