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BU2010 Datasheet(PDF) 3 Page - Vishay Siliconix |
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BU2010 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 6 page New Product BU2006 thru BU2010 Vishay General Semiconductor Document Number: 89298 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Figure 3. Forward Power Dissipation Figure 4. Typical Forward Characteristics Per Diode 04 8 12 16 20 24 0 10 20 30 40 50 Average Forward Current (A) 0.3 1.1 0.01 10 0.1 1 100 0.5 0.7 0.9 Instantaneous Forward Voltage (V) T J = 150 °C T J = 125 °C T J = 25 °C 1.0 0.4 0.6 0.8 Figure 5. Typical Reverse Characteristics Per Diode Figure 6. Typical Junction Capacitance Per Diode 1000 20 10 60 40 30 50 70 90 100 80 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) T J = 150 °C T J = 125 °C T J = 25 °C 0.1 1 10 100 10 1000 Reverse Voltage (V) 100 |
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