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Rev 1.7 01/11

LQA16T300

2

Symbol

Parameter

Conditions

Min

Typ

Max

Units

DC Characteristics

Reverse current

-

-

25

µA

-

0.45

-

mA

Forward voltage

-

1.6

1.9

V

-

1.4

-

V

Junction capacitance

-

50

-

pF

Dynamic Characteristics

-

13

-

ns

Reverse recovery time

dI/dt =200A/

µs

-

25

-

ns

-

11.5

15

nC

Reverse recovery charge

dI/dt =200A/

µs

-

44

-

nC

-

1.5

1.85

A

Maximum reverse

recovery current

dI/dt =200A/

µs

-

2.65

-

A

S

-

0.7

-

Softness factor =

a

b

t

t

dI/dt =200A/

µs

-

0.7

-

Note to component engineers:

Q-Series diodes employ Schottky technologies in their design and construction.

Therefore, Component Engineers should plan their test setups to be similar to those for traditional Schottky test setups.

(For additional details, see Application Note AN-300.)

Figure 1. Reverse Recovery Definitions

Figure 2. Reverse Recovery Test Circuit

Pulse generator

Rg

Q1

VR

+

15V

D1

DUT

L1

0