DBA150

No.2222-1/2

Features

•

Plastic molded structure.

•

Glass passivation for high reliability.

•

Peak reverse voltage : VRM=200, 600V.

•

Average rectified current : IO=15A.

Specifications

Absolute Maximum Ratings at Ta=25

Parameter

Symbol

Conditions

DBA150C

DBA150G

Unit

Peak Reverse Voltage

VRM

200

600

V

Average Recitified Current

IO

Ta=40

°C

¨

4.5

A

Ta=40

¨

15.0

A

Surge Forward Current

IFSM

50Hz sine wave, 1 cycle

¨

200

A

Junction Temperature

Tj

¨

150

°C

Storage Temperature

Tstg

¨

--40 to +150

°C

Insulation Voltage

VIS

¨

2kV

Electrical Characteristics at Ta=25

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Forward Voltage

VF

1.05

V

Reverse Current

IR

10

µA

Thermal Resistance

Rth(j-c)

Junction-Case

2.3

°C/W

Note : Tightening torque : 0.98N·m max.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN2222C

DBA150

Package Dimensions

unit : mm

1170

[DBA150]

41000 GI IM / 52098 HA (KT) / 82595 GI (KOTO) 3019 TA, TS

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Diffused Junction Silicon Diode

15.0A Single-Phase Bridge Rectifier

9

26.5 max

11

25 max

14.4

2.4

4.5