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CPH6347 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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CPH6347 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 4 page CPH6347 No. A1334-1/4 Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Features • 1.8V drive • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS ±12 V Drain Current (DC) ID --6 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --24 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2×0.8mm) 1.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --20 V Zero-Gate Voltage Drain Current IDSS VDS=--20V, VGS=0V --1 μA Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 μA Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.4 V Forward Transfer Admittance | yfs | VDS=--10V, ID=--3A 4.3 7.3 S Static Drain-to-Source On-State Resistance RDS(on)1 ID=--3A, VGS=--4.5V 30 39 mΩ RDS(on)2 ID=--1.5A, VGS=--2.5V 44 66 mΩ RDS(on)3 ID=--0.6A, VGS=--1.8V 68 102 mΩ Marking : YZ Continued on next page. N1611 TKIM TC-00002674/42809PE MSIM TC-00001928 SANYO Semiconductors DATA SHEET CPH6347 P-Channel Silicon MOSFET General-Purpose Switching Device Applications http://semicon.sanyo.com/en/network Ordering number : ENA1334A |
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