CPH6347

No. A1334-1/4

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are

not guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer

's products or equipment. To verify symptoms and states that cannot be evaluated in an

independent device, the customer should always evaluate and test devices mounted in the customer

's

products or equipment.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment. The products mentioned herein

shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,

aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal

system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten

human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they

grant any guarantee thereof. If you should intend to use our products for new introduction or other application

different from current conditions on the usage of automotive device, communication device, office equipment,

industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)

prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be

solely responsible for the use.

Features

•

1.8V drive

•

Halogen free compliance

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

--20

V

Gate-to-Source Voltage

VGSS

±12

V

Drain Current (DC)

ID

--6

A

Drain Current (Pulse)

IDP

PW≤10μs, duty cycle≤1%

--24

A

Allowable Power Dissipation

PD

1.6

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=--1mA, VGS=0V

--20

V

Zero-Gate Voltage Drain Current

IDSS

VDS=--20V, VGS=0V

--1

μA

Gate-to-Source Leakage Current

IGSS

VGS=±8V, VDS=0V

±10

μA

Cutoff Voltage

VGS(off)

VDS=--10V, ID=--1mA

--0.4

--1.4

V

Forward Transfer Admittance

| yfs |

VDS=--10V, ID=--3A

4.3

7.3

S

Static Drain-to-Source On-State Resistance

RDS(on)1

ID=--3A, VGS=--4.5V

30

39

mΩ

RDS(on)2

ID=--1.5A, VGS=--2.5V

44

66

mΩ

RDS(on)3

ID=--0.6A, VGS=--1.8V

68

102

mΩ

Marking : YZ

Continued on next page.

N1611 TKIM TC-00002674/42809PE MSIM TC-00001928

SANYO Semiconductors

DATA SHEET

CPH6347

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network

Ordering number : ENA1334A