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50A02CH Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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50A02CH Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 4 page  50A02CH No.7487-2/4 Collector-to-Emitter Voltage, VCE -- mV Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- mA 0 0 --100 --50 IC -- VCE IT05118 IT05119 --200 --150 --300 --250 --500 --450 --400 --350 --200 --600 --400 --800 --1000 --100 --500 --300 --700 --900 0 0 IC -- VBE --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --200 --600 --500 --400 --300 --100 IB=0μA --200 μA --1mA --500 μA --2mA --5mA --10mA --15mA --30mA --20mA --25mA VCE= --2V IT05120 3 100 hFE -- IC --1.0 2 3 5 7 --10 2 3 5 7 2 3 5 7 --100 --1000 2 3 5 1000 7 5 7 Ta=75°C 25°C --25°C VCE= --2V IT05410 --1.0 23 5 7 --10 23 5 7 2 3 5 7 --100 --100 2 2 3 5 7 3 --10 Ta=75 °C --25 °C 25° C IC / IB=10 VCE(sat) -- IC Collector Current, IC -- mA Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Gain-Bandwidth Product fT VCE=--10V, IC=--50mA 690 MHz Output Capacitance Cob VCB=--10V, f=1MHz 3.8 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=--100mA, IB=--10mA --60 --120 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=--100mA, IB=--10mA --0.9 --1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=--10μA, IE=0A --50 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=--1mA, RBE=∞ --50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=--10μA, IC=0A --5 V Turn-ON Time ton See specified Test Circuit. 30 ns Storage Time tstg See specified Test Circuit. 170 ns Fall Time tf See specified Test Circuit. 30 ns Package Dimensions Switching Time Test Circuit unit : mm (typ) 7015A-003 1 : Base 2 : Emitter 3 : Collector SANYO : CPH3 2.9 0.05 0.4 0.15 2 1 3 0.95 VR RB VCC= --25V VBE=5V + + 50Ω INPUT OUTPUT RL 220μF470μF PW=20μs IB1 D.C.≤1% IB2 IC=20IB1= --20IB2= --200mA |
Similar Part No. - 50A02CH_10 |
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Similar Description - 50A02CH_10 |
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