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5LP01S Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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5LP01S Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 4 page 5LP01S No.6666-1/4 Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --50 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID --0.07 A Drain Current (Pulse) IDP PW ≤10µs, duty cycle≤1% --0.28 A Allowable Power Dissipation PD 0.15 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --50 V Zero-Gate Voltage Drain Current IDSS VDS=--50V, VGS=0V --1 µA Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 µA Cutoff Voltage VGS(off) VDS=--10V, ID=--100µA --0.4 --1.4 V Forward Transfer Admittance yfs VDS=--10V, ID=--40mA 70 100 mS RDS(on)1 ID=--40mA, VGS=--4V 18 23 Ω Static Drain-to-Source On-State Resistance RDS(on)2 ID=--20mA, VGS=--2.5V 20 28 Ω RDS(on)3 ID=--5mA, VGS=--1.5V 30 60 Ω Input Capacitance Ciss VDS=--10V, f=1MHz 7.4 pF Output Capacitance Coss VDS=--10V, f=1MHz 4.2 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 1.3 pF Turn-ON Delay Time td(on) See specified Test Circuit. 20 ns Rise Time tr See specified Test Circuit. 35 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 160 ns Fall Time tf See specified Test Circuit. 150 ns Marking : XB Continued on next page. Ordering number : EN6666A 71206 / 41006PE MS IM TB-00002192 / D2000 TS IM TA-3075 5LP01S P-Channel Silicon MOSFET General-Purpose Switching Device Applications SANYO Semiconductors DATA SHEET Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN |
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