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5LN01M Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # 5LN01M
Description  General-Purpose Switching Device Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

5LN01M Datasheet(HTML) 2 Page - Sanyo Semicon Device

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5LN01M
No.6137-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Turn-ON Delay Time
td(on)
See specified Test Circuit.
18
ns
Rise Time
tr
See specified Test Circuit.
42
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
190
ns
Fall Time
tf
See specified Test Circuit.
105
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=100mA
1.57
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=100mA
0.20
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=100mA
0.32
nC
Diode Forward Voltage
VSD
IS=100mA, VGS=0V
0.85
1.2
V
Package Dimensions
Switching Time Test Circuit
unit : mm
7023-010
0.65 0.65
2.0
0.9
0.6
0.3
12
3
0.3
0.15
0 to 0.1
1 : Gate
2 : Source
3 : Drain
SANYO : MCP
PW=10
µs
D.C.
≤1%
4V
0V
VIN
P.G
50
Ω
G
S
D
ID=50mA
RL=500Ω
VDD=25V
VOUT
5LN01M
VIN
ID -- VDS
ID -- VGS
RDS(on) -- VGS
RDS(on) -- ID
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
0
0
0.02
0.01
0.04
0.03
0.06
0.05
0.08
0.07
0.2
0.10
0.09
0.4
0.6
0.8
1.0
3.5V
2.0V
2.5V
4.0V
0
0.5
1.0
1.5
2.0
3.0
2.5
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
VDS=10V
01
2
6
7
8
9
10
11
12
34
5
6
2
3
4
5
78
9
10
Ta=25
°C
0.01
1.0
0.1
23
5
7
23
5
7
10
7
5
3
2
100
7
5
3
2
1.0
VGS=4V
--25
°C
25
°C
Ta=75
°C
IT00054
IT00055
IT00056
IT00057
VGS=1.5V
ID=30mA
50mA


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