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B360B Datasheet(PDF) 1 Page - Vishay Siliconix |
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B360B Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page Document Number: 89122 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 13-Oct-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 Surface Mount Schottky Rectifier B350B, B360B Vishay General Semiconductor New Product FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 50 V, 60 V IFSM 60 A VF at IF = 3.0 A 0.51 V TJ max. 150 °C DO-214AA (SMB) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL B350B B360B UNIT Device marking code B35 B36 Maximum repetitive peak reverse voltage VRRM 50 60 V Maximum average forward rectified current at TL (fig. 1) IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 60 A Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Maximum instantaneous forward voltage IF = 3.0 A TJ = 25 °C VF (1) 0.58 0.66 V TJ = 125 °C 0.51 0.59 Maximum reverse current Rated VR TJ = 25 °C IR (2) - 100 μA TJ = 125 °C 3 10 mA |
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