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FM25W256-GTR Datasheet(PDF) 1 Page - Ramtron International Corporation |
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FM25W256-GTR Datasheet(HTML) 1 Page - Ramtron International Corporation |
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1 / 13 page  Preliminary This is a product that has fixed target specifications but are subject Ramtron International Corporation to change pending characterization results. 1850 Ramtron Drive, Colorado Springs, CO 80921 (800) 545-FRAM, (719) 481-7000 Rev. 1.3 http://www.ramtron.com Feb. 2011 Page 1 of 13 FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion (1014) Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI • Up to 20 MHz Frequency • Direct Hardware Replacement for EEPROM • SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Write Protection Scheme • Hardware Protection • Software Protection Low Power Operation • Wide Voltage Operation 2.7V – 5.5V • 15 µA (typ.) Standby Current Industry Standard Configurations • Industrial Temperature -40 °C to +85°C • 8-pin “Green”/RoHS SOIC (-G) Description The FM25W256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM25W256 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after it has been successfully transferred to the device. The next bus cycle may commence immediately without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The FM25W256 is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM25W256 ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The FM25W256 provides substantial benefits to users of serial EEPROM as a hardware drop-in replacement. The FM25W256 uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. Device specifications are guaranteed over an industrial temperature range of -40°C to +85°C. Pin Configuration Pin Name Function /CS Chip Select /WP Write Protect /HOLD Hold SCK Serial Clock SI Serial Data Input SO Serial Data Output VDD Supply Voltage (2.7 to 5.5V) VSS Ground Ordering Information FM25W256-G “Green”/RoHS 8-pin SOIC FM25W256-GTR “Green”/RoHS 8-pin SOIC, Tape & Reel CS SO WP VSS VDD HOLD SCK SI 1 2 3 4 8 7 6 5 |
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Similar Description - FM25W256-GTR |
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