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SWP3N80 Datasheet(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SWP3N80 Datasheet(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
1 / 7 page Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Features ■ High ruggedness ■ R DS(ON) (Max 4.5 Ω)@VGS=10V ■ Gate Charge (Typ 26nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. N-channel MOSFET Absolute maximum ratings Symbol Parameter Value Unit TO-220 TO-220F V DSS Drain to Source Voltage 800 V I D Continuous Drain Current (@T C=25 oC) 3.0 3.0* A Continuous Drain Current (@T C=100 oC) 1.9 1.9* A I DM Drain current pulsed (note 1) 12 A V GS Gate to Source Voltage ± 30 V E AS Single pulsed Avalanche Energy (note 2) 310 mJ E AR Repetitive Avalanche Energy (note 1) 10 mJ dv/dt Peak diode Recovery dv/dt (note 3) 4.5 V/ns P D Total power dissipation (@T C=25 oC) 106 39* W Derating Factor above 25oC 0.8 0.31 W/oC T STG, TJ Operating Junction Temperature & Storage Temperature -55 ~ + 150 oC T L Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 300 oC Thermal characteristics Symbol Parameter Value Unit TO-220 TO-220F R thjc Thermal resistance, Junction to case 1.18 3.18 oC/W R thcs Thermal resistance, Case to Sink 0.5 oC/W R thja Thermal resistance, Junction to ambient 62.5 oC/W Mar. 2011. Rev. 2.0 1/7 *. Drain current is limited by junction temperature. BV DSS : 800V I D : 3.0A R DS(ON) : 4.5ohm 1 2 3 1. Gate 2. Drain 3. Source TO-220F 1 2 3 TO-220 SW3N80 SAMWIN 1 2 3 Order Codes Item Sales Type Marking Package Packaging 1 SW P 3N80 SW3N80 TO-220 TUBE 2 SW F 3N80 SW3N80 TO-220F TUBE |
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