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SWI1N60C Datasheet(PDF) 2 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SWI1N60C Datasheet(HTML) 2 Page - Xian Semipower Electronic Technology Co., Ltd. |
2 / 7 page Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Electrical characteristic ( T C = 25 oC unless otherwise specified Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BV DSS Drain to source breakdown voltage V GS=0V, ID=250uA 600 - - V I DSS Drain to source leakage current V DS=600V, VGS=0V - - 1 uA V DS=480V, TC=125 oC - - 10 uA I GSS Gate to source leakage current, forward V GS=30V, VDS=0V - - 100 nA V GS=-30V, VDS=0V - - -100 nA Gate to source leakage current, reverse On characteristics V GS(TH) Gate threshold voltage V DS=VGS, ID=250uA 2.0 - 4.0 V R DS(ON) Drain to source on state resistance V GS=10V, ID = 0.5A 5 9 Ω Dynamic characteristics C iss Input capacitance V GS=0V, VDS=25V, f=1MHz - 120 150 pF C oss Output capacitance - 18 25 C rss Reverse transfer capacitance - 4 6 t d(on) Turn on delay time V DS=300V, ID=1.0A, RG=25Ω - 15 35 ns tr Rising time - 75 140 t d(off) Turn off delay time - 30 60 t f Fall time - 35 60 Q g Total gate charge V DS=480V, VGS=10V, ID=1.0A - 7 9 nC Q gs Gate-source charge - 1.3 - Q gd Gate-drain charge - 2.4 - Source to drain diode ratings characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I S Continuous source current Integral reverse p-n Junction diode in the MOSFET - - 1.0 A I SM Pulsed source current - - 4.0 A V SD Diode forward voltage drop. I S=1.0A, VGS=0V - - 1.5 V T rr Reverse recovery time I S=1.0A, VGS=0V, dI F/dt=100A/us - 190 - ns Q rr Breakdown voltage temperature - 0.44 - uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 95mH, I AS = 1.0A, VDD = 50V, RG=25Ω, Starting TJ = 25 oC 3. I SD ≤ 1.0A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25 oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. SW1N60C SAMWIN 2/7 |
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