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2SB945 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SB945 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB945 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@IC= -4A ·Good Linearity of hFE ·Large Collector Current IC ·Complement to Type 2SD1270 APPLICATIONS ·Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -10 A Collector Power Dissipation @ Ta=25℃ 2 PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn |
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