50MT060WHTAPBF datasheet(1/7 Pages) VISHAY

Part #	50MT060WHTAPBF

Description	Half Bridge IGBT MTP (Warp Speed IGBT), 114 A

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 94468

For technical questions, contact: indmodules@vishay.com

www.vishay.com

Revision: 01-Mar-10

1

"Half Bridge" IGBT MTP (Warp Speed IGBT), 114 A

50MT060WHTAPbF

Vishay High Power Products

FEATURES

• Generation 4 warp speed IGBT technology

•HEXFRED® antiparallel diodes with ultrasoft

reverse recovery

• Very low conduction and switching losses

• Optional SMD thermistor (NTC)

• Very low junction to case thermal resistance

• UL approved file E78996

• Speed 60 kHz to 100 kHz

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Optimized for welding, UPS and SMPS applications

• Low EMI, requires less snubbing

• Direct mounting to heatsink

• PCB solderable terminals

• Very low stray inductance design for high speed operation

PRODUCT SUMMARY

VCES

600 V

VCE(on) typical at VGE = 15 V

2.3 V

IC at TC = 25 °C

114 A

MTP

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

UNITS

Collector to emitter voltage

VCES

600

V

Continuous collector current

IC

TC = 25 °C

114

A

TC = 109 °C

50

Pulsed collector current

ICM

350

Peak switching current

ILM

350

Diode continuous forward current

IF

TC = 109 °C

34

Peak diode forward current

IFM

200

Gate to emitter voltage

VGE

± 20

V

RMS isolation voltage

VISOL

Any terminal to case, t = 1 minute

2500

Maximum power dissipation

PD

TC = 25 °C

658

W

TC = 100 °C

263

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50MT060WHTAPBF Datasheet(PDF) 1 Page - Vishay Siliconix

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